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IRFBA1404P hexfet ? power mosfet specifically designed for automotive applications, this stripe planar design of hexfet ? power mosfets utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this mosfet are a 175 o c junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche. the super-220 tm is a package that has been designed to have the same mechanical outline and pinout as the industry standard to-220 but can house a considerably larger silicon die. the result is significantly increased current handling capability over both the to-220 and the much larger to- 247 package. the combination of extremely low on-resistance silicon and the super-220 tm package makes it ideal to reduce the component count in multiparalled to-220 applications, reduce system power dissipation, upgrade existing designs or have to-247 performance in a to-220 outline. this package has been designed to meet automotive, q101, qualification standard. these benefits make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. description s d g 8/14/02 www.irf.com 1
c anti-lock braking systems (abs) electric power steering (eps) electric braking radiator fan control v dss = 40v r ds(on) = 3.7m ? i d = 206a typical applications benefits advanced process technology ultra low on-resistance increase current handling capability 175c operating temperature fast switching dynamic dv/dt rating repetitive avalanche allowed up to tjmax automotive mosfet parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 206 i d @ t c = 100c continuous drain current, v gs @ 10v 145 a i dm pulsed drain current 650 p d @t c = 25c power dissipation 300 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 480 mj i ar avalanche current see fig.12a, 12b, 14, 15 a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -40 to + 175 t stg storage temperature range -55 to + 175 soldering temperature, for 10 seconds 300 (1.6mm from case ) recommended clip force 20 n pd - 93806b
2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.036 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 3.7 m ? v gs = 10v, i d = 95a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = 10v, i d = 250a g fs forward transconductance 106 ??? ??? s v ds = 25v, i d = 60a ??? ??? 20 a v ds = 40v, v gs = 0v ??? ??? 250 v ds = 32v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 200 v gs = 20v gate-to-source reverse leakage ??? ??? -200 na v gs = -20v q g total gate charge ??? 160 200 i d = 95a q gs gate-to-source charge ??? 35 ??? nc v ds = 32v q gd gate-to-drain ("miller") charge ??? 42 60 v gs = 10v t d(on) turn-on delay time ??? 17 ??? v dd = 20v t r rise time ??? 140 ??? i d = 95a t d(off) turn-off delay time ??? 72 ??? r g = 2.5 ? t f fall time ??? 26 ??? r d = 0.21 ? between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 7360 ??? v gs = 0v c oss output capacitance ??? 1680 ??? v ds = 25v c rss reverse transfer capacitance ??? 240 ??? pf ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 6630 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 1490 ??? v gs = 0v, v ds = 32v, ? = 1.0mhz c oss eff. effective output capacitance ??? 1540 ??? v gs = 0v, v ds = 0v to 32v nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 2.0 5.0 i dss drain-to-source leakage current s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 95a, v gs = 0v t rr reverse recovery time ??? 71 110 ns t j = 25c, i f = 95a q rr reverse recovery charge ??? 180 270 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 206 650 parameter typ. max. units r jc junction-to-case ??? 0.50 r cs case-to-sink, flat, greased surface 0.5 ??? c/w r ja junction-to-ambient ??? 58 thermal resistance
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 159a
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 12000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 95a v = 20v ds v = 32v ds 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 10000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - 25 50 75 100 125 150 175 0 60 120 180 240 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 12d. typical drain-to-source voltage vs. avalanche current 0 20 40 60 80 100 i av , avalanche current ( a) 40 42 44 46 48 50 v d s a v , a v a l a n c h e v o l t a g e ( v ) 25 50 75 100 125 150 175 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 39a 67a 95a
www.irf.com 7 fig 14. typical avalanche current vs.pulsewidth fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 95a 1.0e-08 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01
8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - -
? ? ? ! "#$$ ? % &""& ? '(!" ? )"* ? '+!" &" fig 16. for n-channel hexfet ? power mosfets
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2x a 123 3x 0.25 [.010] b a b 4x 4 0.25 [.010] b a 3.00 [.118] 2.50 [.099] 14.50 [.570] 13.00 [.512] 4.00 [.157] 3.50 [.138] 1.30 [.051] 0.90 [.036] 2.55 [.100] 1.00 [.039] 0.70 [.028] 5.00 [.196] 4.00 [.158] 11.00 [.433] 10.00 [.394] 1.50 [.059] 0.50 [.020] 15.00 [.590] 14.00 [.552] 9.00 [.354] 8.00 [.315] 13.50 [.531] 12.50 [.493] lead assignments 2 - drain 1 - gat e mos f e t 4 - drain 3 - s ource 4 - colle ct or 3 - emitter 2 - colle ct or 1 - gat e igbt 1. dime ns ioning & t ole rancing pe r as me y14.5m-1994 . 2. controlling dimension: millimeter. 3. di me ns i ons ar e s h own i n mi l l i me t e r s [i nch e s ]. not e s : 4. ou t l i ne conf or ms t o j e de c ou t l i ne t o-27 3aa. repetitive rating; pulse width limited by max. junction temperature. i sd 95a, di/dt 150a/s, v dd v (br)dss , t j 175c
starting t j = 25c, l = 0.11mh r g = 25 ? , i as = 95a. pulse width 400s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . refer to an-1001 calculated continuous current based on maximum allowable junction temperature. package limitation current is 95a. data and specifications subject to change without notice. this product has been designed and qualified for the automotive [q101] market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 8/02 not recommended for surface mount application

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